Hiroshi Amano: Diferenzas entre revisións
Contido eliminado Contido engadido
Sen resumo de edición |
|||
Liña 6:
* {{cite journal | last1=Amano | first1=H. | last2=Sawaki | first2=N. | last3=Akasaki | first3=I. | last4=Toyoda | first4=Y. | title=Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer | journal=Applied Physics Letters | publisher=AIP Publishing | volume=48 | issue=5 | date=1986-02-03 | issn=0003-6951 | doi=10.1063/1.96549 | pages=353–355| bibcode=1986ApPhL..48..353A }}
* {{cite journal | last1=Amano | first1=Hiroshi | last2=Akasaki | first2=Isamu | last3=Kozawa | first3=Takahiro | last4=Hiramatsu | first4=Kazumasa | last5=Sawaki | first5=Nobuhiko | last6=Ikeda | first6=Kousuke | last7=Ishii | first7=Yoshikazu | title=Electron beam effects on blue luminescence of zinc-doped GaN | journal=Journal of Luminescence | publisher=Elsevier BV | volume=40-41 | year=1988 | issn=0022-2313 | doi=10.1016/0022-2313(88)90117-2 | pages=121–122| bibcode=1988JLum...40..121A }}
* {{cite journal | last1=Amano | first1=Hiroshi | last2=Kito | first2=Masahiro | last3=Hiramatsu | first3=Kazumasa | last4=Akasaki | first4=Isamu | title=P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) | journal=Japanese Journal of Applied Physics | publisher=Japan Society of Applied Physics | volume=28 | issue=Part 2, No. 12 | date=1989-12-20 | issn=0021-4922 | doi=10.1143/jjap.28.l2112 | pages=L2112–L2114| bibcode=1989JaJAP..28L2112A
* {{cite journal | last1=Murakami | first1=Hiroshi | last2=Asahi | first2=Tsunemori | last3=Amano | first3=Hiroshi | last4=Hiramatsu | first4=Kazumasa | last5=Sawaki | first5=Nobuhiko | last6=Akasaki | first6=Isamu | title=Growth of Si-doped Al<sub>x</sub>Ga<sub>1–x</sub>N on (0001) sapphire substrate by metalorganic vapor phase epitaxy | journal=Journal of Crystal Growth | publisher=Elsevier BV | volume=115 | issue=1–4 | year=1991 | issn=0022-0248 | doi=10.1016/0022-0248(91)90820-u | pages=648–651| bibcode=1991JCrGr.115..648M }}
* {{cite journal | last1=Itoh | first1=Kenji | last2=Kawamoto | first2=Takeshi | last3=Amano | first3=Hiroshi | last4=Hiramatsu | first4=Kazumasa | last5=Akasaki | first5=Isamu | title=Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures | journal=Japanese Journal of Applied Physics | publisher=Japan Society of Applied Physics | volume=30 | issue=Part 1, No. 9A | date=1991-09-15 | issn=0021-4922 | doi=10.1143/jjap.30.1924 | pages=1924–1927| bibcode=1991JaJAP..30.1924I }}
| |||